flzii.su BTW42 seres thyristors glass-passivated silicon thyristors in metal envelopes with high dvrj/dt capabilities. they are intended for use in power control circuits and switching systems where high transients can occur (e.g. phase control in three-phase systems). the series consists of reverse polarity types (anode to stud) identified by a suffix r: BTW42?600r to 1000r. quick reference data repetitive peak voltages average on-state current r.m.s. on-state current non-repetitive peak on-state current vdrm/vrrm 't(av) 't(rms) 'tsivl BTW42-600r 80 max. 600 80 or 1000r 0 1000 v max. 10 a max. 16 a max. 150 a rate of rise of off -state voltage that will not trigger any device on request (see ordering note) dvd/dt dvd/dt < 500 v/ms < 1000 v/ms mechanical data fig.1 to-64 dimensions in mm 18.5 max ? 09.3 max t 5 tax t ms f l 1.98^ max 11.50 * }- 3.5 max ? 10.28 max 21 i i .72 oh *fc ?11.0- 10.72 quality semi-conductors
ratings limiting values in accordance with the absolute maximum system (iec 134) anode to cathode non-repetitive peak voltages (t<10ms) repetitive peak voltages crest working voltages average on-state current (averaged over any 20 ms period) up to tmt, = 85 c r.m.s. on-state current repetitive peak on-state current non-repetitive peak on-state current; t = 10 ms; half sine-wave; tj = 125 c prior to surge; with reapplied vrwmmax 12t for fusing (t= 10ms) rate of rise of on-state current after triggering with ig = 250 ma to ly = 25 a; dl^/dt = 0,25 a/ms gate to cathode average power dissipation (averaged over any 20 ms period) peak power dissipation temperatures storage temperature junction temperature thermal resistance from junction to mounting base from mounting base to heatsink with heatsink compound from junction to ambient in free air transient thermal impedance (t = 1 ms) operating note the terminals should neither be bent nor twisted; they should be soldered into the circuit so that there is no strain on them. during soldering the heat conduction to the junction should be kept to a minimum. vdsm/vrsm vdrm/vrrm vdwm/vrwm BTW42-600r 80 max. 600 80 max. 600 80 max. 400 60 or 1000r 0 1000 v 0 1000 v 0 700 v* 't(av) max- 10 a 't(rms) max- 16 a 'trm max. 75 a s; itsm max- 150 a i2t max. 112 a2s ,25 a/ms dl-p/dt max, 50 a/ys pg(av) ma> pgm ma> c. 0,5 w [. 5 w tstg -55 to + 125 c tj max. 125 c rth j-mb rth mb-h rth j-a zth j-mb 1,8 k/w 0,5 k/w 45 k/w 0,1 k/w
characteristics a node to cathode 0 estate voltage (measured under pulse conditions) lt = 20a;tj = 25c rate of rise of off-state voltage that will not trigger any device; expontential method; vd = 2/3vdrmmax;tj=125c reverse current vr = vrwmmax;tr 125c off -state current latching current; tj = 25 c holding current; tj = 25 c gate to cathode voltage that will trigger all devices vd = 6 v; tj = 25 c voltage that will not trigger any device current that will trigger all devices vd = 6 v; tj = 25 c switching characteristics gate-controlled turn-on time (tg-j = t(j + tr) when switched from vrj - vqpmmax to l-p = 40 a; igt = 100 ma; dlg/dt = 5 a/pts; tj = 25 c circuit-commutated turn-off time when switched from it = 40 a to vr > 50 v with -dlt/dt = loa/ais; dvd/dt = 50 v/ps; tj.= 1 15 c dvd/dt |r id 'l ih vgt vgd 'gt typ. typ. 500 v/ms 3 ma 3 ma 150 ma 75 ma 1.5 v 200 mv 50 ma 35 /is
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